semihow rev.a1,march 2013 htp6a60h_HTP6A80H t2 t1 g htp6a60h/HTP6A80H 3 quadrants standard triac v drm = 600v/800v i t(rms) = 6 a i tsm = 63 a i gt = 25ma symbol features ? repetitive peak off - state voltage : 600v/800v ? r.m.s on ? state current (i t(rms) = 6a) ? gate trigger current : 25ma ? high commutation capability. applications general purpose of ac switching, heating control, motor control, etc general description semihow?s standard triac product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage . it is generally suitable for power and phase control in ac application absolute maximum ratings (t j =25 unless otherwise specified ) symbol parameter conditions ratings unit htp6a60h HTP6A80H v drm repetitive peak off - state voltage sine wave, 50/60hz, gate open 600 800 v v rrm repetitive peak reverse voltage 600 800 v i t(av) average on - state current full sine wave, t c = 97.6 o c 5.4 a i t(rms) r.m.s. on - state current 6 a i tsm surge on - state current ? cycle, 50hz/60hz, sine wave, non repetitive 60/63 a i 2 t fusing current t = 10ms 18 a 2 s p gm forward peak g ate power dissipation t j = 125 c 5 w p g(av) forward average gate power dissipation t j = 125 c, over any 20ms 0.5 w i fgm forward peak gate current t j = 125 c, pulse width 20us 2 a v rgm reverse peak gate voltage t j = 125 c, pulse width 20us 10 v t j operating junction temperature - 40~+ 150 o c t stg storage temperature - 40~+150 o c to - 220
semihow rev.a1,march 2013 htp6a60h_HTP6A80H electrical characteristics ( t j =25 unless otherwise specified ) thermal characteristics symbol parameter conditions min typ max unit r jc thermal resistance junction to case 3.9 o c /w r ja thermal resistance junction to ambient 58 o c /w notes : 1. pulse width 1.0ms, duty cycle 1% symbol parameter conditions min typ max unit i drm repetitive peak off - state current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i rrm repetitive peak reverse current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i gt gate trigger current v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 25 ma v gt gate trigger voltage v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 1.5 v v gd non - trigger gate voltage 1 v d = 12v, r l =330 ? , t j =125 o c 0.2 - - v v tm peak on - state voltage i t = 8.5a, i g = 20ma - 1.2 1.5 v dv/ dt critical rate of rise of off - state voltage v d = 2/3 v drm , t j =125 o c 200 - - v/us i h holding current i t = 0.2a - 45 - ma
semihow rev.a1,march 2013 htp6a60h_HTP6A80H 0 1 2 3 4 5 6 7 90 100 110 120 130 180 o 150 o 120 o 90 o 60 o maximum allowable case temperature, t c [ o c] r.m.s. on state current, i t(rms) [a] 30 o 0 1 2 3 4 5 6 7 0 2 4 6 8 30 o 60 o 90 o 120 o 150 o power dissipation, p d [w] r.m.s. on state current, i t(rms) [a] 180 o 10 0 10 1 10 2 0 10 20 30 40 50 60 70 80 50hz 60hz surge on state current, i tsm [a] time [cycles] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 25[ o c] i + gt1 i - gt1 i - gt3 p g(av) (0.5w) p gm (5w) v gd gate voltage, v g [v] gate current, i g [ma] -50 -25 0 25 50 75 100 125 150 0 1 2 3 x 100 (%) igt(t o c) igt(25 o c) junction temperature, t j [ o c] i + gt1 i - gt1 i - gt3 -50 -25 0 25 50 75 100 125 150 0 1 2 3 junction temperature, t j [ o c] v + gt1 v - gt1 v - gt3 x 100 (%) igt(t o c) igt(25 o c) typical characteristics fig 1. r.m.s. current vs. power dissipation fig 2. r.m.s. current vs. case temperature fig 3. gate power characteristics fig 4. surge on state current rating (non - repetitive) fig 5. gate trigger current vs. junction temperature fig 6. gate trigger voltage vs. junction temperature
semihow rev.a1,march 2013 htp6a60h_HTP6A80H typical characteristics fig 7. holding current vs. junction temperature fig 8. thermal impedance vs. pulse time fig 9. instantaneous on state current vs. instantaneous on state voltage r g r l v dd v g (1) quadrant i r g r l v dd v g (2) quadrant ii r g r l v dd v g (3) quadrant iii r g r l v dd v g (4) quadrant iv measurement of gate trigger current note. whole parameter and test condition can not be over absolute maximum ratings in this datasheet. 0 1 2 3 4 10 -1 10 0 10 1 10 2 25 o c instantaneou on state current, i t [a] instantaneou on state voltage, v t [v] 150 o c -50 -25 0 25 50 75 100 125 150 0 1 2 3 junction temperature, t j [ o c] x 100(%) i h (t o c) i h (25 o c) r s =0.052 ? v to =0.81v 10 -2 10 -1 10 0 10 1 10 0 10 1 thermal impedance [ o c/w] pulse time [sec]
semihow rev.a1,march 2013 htp6a60h_HTP6A80H package dimension 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ to - 220 (a)
semihow rev.a1,march 2013 htp6a60h_HTP6A80H 0.20 2.74 0.20 15.44 0.20 13.28 0.20 2.67 0.20 6.30 0.20 0.81 0.20 1.27 0.20 1.27 0.20 4.57 0.20 0.40 0.20 2.67 0.20 9.14 0.20 3.84 0.20 2.54typ 2.54typ to - 220 (b) package dimension
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